Wafer Products: Ibis Technology -

Ibis produces high quality SIMOX-SOI wafers of several different types:

Advantox MLD-UT wafers have an ultra-thin top silicon layer, ideally suited for next-generation CMOS devices requiring high quality and extreme SOI uniformity.
Advantox MLD wafers are production-proven for high quality, consistently uniform, low cost SOI wafers.
SIMOX 400 wafers are thick SOI wafers specifically intended for high voltage, high temperature or radiation-hardened devices.

Parameters	SIMOX 400	Advantox MLD	Advantox MLD-UT
Wafer diameter (mm)	100, 150, 200	150, 200, 300	150, 200, 300
Wafer type	CZ / FZ, P or N	CZ / FZ, P or N	CZ / FZ, P or N
Wafer resistivity	1-20 ohm•cm	1-20 ohm•cm	1-20 ohm•cm
Wafer orientation	<100>	<100>	<100>
Advanced starting substrate	Optional	Yes	Yes
Typical SOI thickness	210 nm	145 nm	55 nm
Adjustable SOI thickness range⁽¹⁾		20 nm to 145 nm⁽²⁾	20 nm to 70 nm⁽³⁾
SOI uniformity		±3 nm	±2 nm
Nominal BOX thickness	375 nm	135 nm (2)	145 nm (3)
BOX uniformity	±10 nm	±5 nm	±5 nm
Surface particles (>0.3µm)	0.1/cm²	0.1/cm²	0.1/cm²
HF defect density	<0.5/cm²	0.1/cm²	0.1/cm²
BOX pinhole density	<0.1/cm²	<0.1/cm²	<0.1/cm²
BOX dielectric breakdown	>5MV/cm	>7MV/cm	>7MV/cm
Surface roughness (RMS)	7 Å	<5 Å	<1.5 Å
Surface metals (TXRF)	<5E10/cm²	<3E10/cm²	<3E10/cm²
Microvoids or Si peeling	None	None	None
Edge exclusion	3mm	3mm	3mm
BOX edge exclusion	None	None	None
Slip	None	None	None
(1) SOI thickness can be increased by epitaxial growth to 5µm for Advantox MLD, and to 50µm for SIMOX 400. Resulting within-wafer thickness uniformity is <±2.5%. Please contact Ibis for a list of qualified EPI vendors.
(2) For SOI thicknesses <145nm, please contact Ibis for BOX thickness parameters.
(3) For SOI thicknesses <55nm, please contact Ibis for BOX thickness parameters.