Hub of i2000 implanter holds thirteen
300-millimeter wafers in each batch.

In a move that enables the semiconductor industry to remain on track with Moore's law regarding the production of new, more advanced IC devices, Ibis Technology Corporation developed its new i2000 oxygen ion implanter.

The i2000 implanter end-station load ports can accommodate 300-millimeter wafers in FOUP or open cassettes.

Building on the success of Ibis model 1000 implanters, this third-generation implanter is a high-throughput, high-volume production tool for manufacturing 300-millimeter SIMOX-SOI wafers.

i2000 Implanter Flexibility - Ibis' i2000 implanter can accept 300-mm wafers made of silicon, or a combination of silicon and silicon germanium, or other combinations of materials. By using a range of manufacturing processes, the system can produce a variety of SIMOX-SOI wafers, including Advantox MLD and MLD-UT wafers, patterned SIMOX-SOI wafers and strained-silicon-on-SIMOX-SOI wafers. All of these are dependent on the starting wafer. We believe the system' s flexibility is well suited to the era of Silicon Plus.

Modular design - The i2000 implanter is divided into five modules, designed to simplify the process of shipping and reassembling the system at the customer's facility.

Front End	The Front End Module is where starting wafers are loaded and implanted wafers are unloaded. The factory interface is available with a wide variety of industry-standard load ports. The i2000 implanter end-station load ports can accommodate 300-millimeter wafers in FOUP or open cassettes.
Process Chamber	The Process Chamber Module contains the rotating hub which scans the wafers through the ion beam. This module also contains the lamp modules, which are used for heating the wafers before and during implantation.
Beam Line	Ibis i2000 beamline The Beam Line Module contains the patented Ibis MagScan which uses a magnetic field to scan and collimate the beam, providing a uniform dose and gentle thermal loading.
Accelerator	The Accelerator Module is where the ion beam is accelerated to its final energy and focused.
Terminal	The Terminal Module houses the ion source and extraction system, which is where the ion beam is created, and the analyzer magnet, which selects the desired oxygen ions.

i2000 Implanter Benefits - The i2000 implanter is a third-generation oxygen implantation system designed to be a high-throughput, high-volume production tool for manufacturing 300-millimeter SIMOX-SOI wafers. We believe that the primary benefits of the i2000 implanter include:

Lower cost of ownership, the ability to produce quality SOI products, and a design that facilitates fast installation, set up and qualification. Lower cost of ownership, as compared to the Ibis 1000 implanter, is a result of several factors, including higher throughput, which is achieved by using faster load and unload cycles, rapid heating of the wafers in the process chamber, and the use of active cooling to cool wafers quickly after processing at very high temperature. A higher beam current, achieved through improved extraction optics, also enhances through put.

The smaller footprint of the i2000 implanter contributes to lower cost of ownership by taking up less cleanroom space. Despite its smaller footprint, the new i2000 implanter has a process chamber large enough to handle thirteen 300-millimeter wafers.

Finally, the reliability of the i2000 implanter keeps downtime to a minimum and maintenance costs low.

Quality products

Solid engineering throughout the i2000 development program resulted in a machine with minimal particle contamination—an ongoing challenge in virtually every corner of the semiconductor equipment industry.

The i2000 implanter is also capable of delivering a very uniform implant dose. This implant uniformity helps assure uniformity of the buried oxide and top silicon layers. As the need for thinner and thinner top silicon layers continues to emerge, we believe that the uniformity delivered by the i2000 implanter will become more and more important.

Features

Consistent, high-quality wafers, throughput capable of up to 24,000 300-mm wafers per year and reduced cost of ownership are only a few of the extraordinary features of the new i2000 implanter.

Additional Features- The i2000 implanter also incorporates a number of features customers expect on leading edge processing tools:

• off-hub wafer cooling
• end-station load ports that accommodate 300-millimeter wafers in
  FOUP or open cassettes
• system software that supports multiple GUI's,
• remote diagnostics,
• recipe operation,
• data logging,
• SECS/GEM factory communications,
• support for SEMI safety and ergonomics standards, and
• Ibis' patented MagScan magnetic scanning beam technology .

Performance Parameters

To learn more about the i2000 implanter, or to inquire about the purchase of a system, please contact Ibis' sales department (sales@ibis.com).

Click to download the Ibis_i2000 Data Sheet.